Electronic structure of strained Sin/Gen(001) superlattices

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Ciraci S., Gülseren O., Ellialtıoğlu S. Ş.

Solid State Communications, vol.65, no.11, pp.1285-1290, 1988 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 65 Issue: 11
  • Publication Date: 1988
  • Doi Number: 10.1016/0038-1098(88)90078-6
  • Journal Name: Solid State Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1285-1290
  • TED University Affiliated: No

Abstract

Using the empirical tight binding method we have investigated the electronic properties of the Sin/Gen(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 4 we have found that first and second conduction band states are localized in Si. The hole states localized in Ge appear for n ≥ 4. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n=6 which can be considered to be quasi-direct. For the cases n=6 and n=8, the band gap might become direct for large values of band misfit. © 1988.