Layered semiconductor GeS as a birefringent stratified medium

Süleymanov R., Ellialtıoğlu S. Ş., AKINOĞLU B. G.

Physical Review B, cilt.52, sa.11, ss.7806-7809, 1995 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 52 Sayı: 11
  • Basım Tarihi: 1995
  • Doi Numarası: 10.1103/physrevb.52.7806
  • Dergi Adı: Physical Review B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.7806-7809
  • TED Üniversitesi Adresli: Hayır

Özet

Transmission and reflection spectra of GeS single crystals of different thickness have been measured in a wide spectral range. The interference spectra have two periods in unpolarized light, one of which is the usual Fabry-Perot type while the other is due to birefringence. It is also shown that the reflection coefficient in the transparent region depends on the crystal thickness and reaches the value of about 0.75 for thick crystals (∼800 μm). The results obtained have been analyzed by using the 4×4 matrix method for multilayer optical systems. It is shown that GeS can be considered as a natural birefringent stratified medium. © 1995 The American Physical Society.