Ab initio study of the one-monolayer Sb/Si(0 0 1) interface

ÇAKMAK M., Shaltaf R., Srivastava G., Ellialtıoğlu S. Ş.

Proceedings of the 7th International Conference on Nanometer, Malmö, İsveç, 29 - 31 Ağustos 2002, cilt.532-535, ss.661-665 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 532-535
  • Doi Numarası: 10.1016/s0039-6028(03)00454-0
  • Basıldığı Şehir: Malmö
  • Basıldığı Ülke: İsveç
  • Sayfa Sayıları: ss.661-665
  • Anahtar Kelimeler: density functional calculations, surface electronic phenomena (work function, surface potential, surface states, etc.), chemisorption, adsorption kinetics, surface stress, silicon, antimony, arsenic, ELECTRON-GAS, SURFACE, PSEUDOPOTENTIALS, SI(100), ADSORPTION, SYSTEMS, STRESS, ENERGY, SB
  • TED Üniversitesi Adresli: Hayır

Özet

Ab initio calculations, based on norm-conserving pseudopotentials and density functional theory, have been performed to investigate the displacive Sb adsorption on the Si(001) surface with the (2 × 1) reconstruction. For the one-monolayer coverage of Sb, even though the formation of a pure Sb-Sb dimer is energetically more favorable than the interdiffusion of Sb into any of the second and third substrate layers, we found further that this interdiffusion will relieve the tensile stress along the dimer bond leading to an increasing isotropy in surface stress indicating that displacive adsorption might still be an intermediate step towards surface roughness. © 2003 Elsevier Science B.V. All rights reserved.