Electronic structure of SiO2(111) thin film

Ciraci S., Elliatioǧlu Ş.

Solid State Communications, vol.40, no.5, pp.587-589, 1981 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 40 Issue: 5
  • Publication Date: 1981
  • Doi Number: 10.1016/0038-1098(81)90580-9
  • Journal Name: Solid State Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.587-589
  • TED University Affiliated: No

Abstract

The electronic structure of (111) surface of β-crystobalite is investigat ed using the empirical tight binding method. Our calculations identify surface states in the conduction band, band gap and valence band. The surface state formed from silicon-s and pz orbitals, which is believed to account for the structure in the O K excitation spectra, lies in the band gap. It is seen that oxygen adsorption on the surface removes surface states and gives rise to a sharp peak at about - 3.8 eV below the valence band edge. © 1981.