Electronic structure of SiO2(111) thin film

Ciraci S., Elliatioǧlu Ş.

Solid State Communications, cilt.40, sa.5, ss.587-589, 1981 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 40 Sayı: 5
  • Basım Tarihi: 1981
  • Doi Numarası: 10.1016/0038-1098(81)90580-9
  • Dergi Adı: Solid State Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.587-589
  • TED Üniversitesi Adresli: Hayır

Özet

The electronic structure of (111) surface of β-crystobalite is investigat ed using the empirical tight binding method. Our calculations identify surface states in the conduction band, band gap and valence band. The surface state formed from silicon-s and pz orbitals, which is believed to account for the structure in the O K excitation spectra, lies in the band gap. It is seen that oxygen adsorption on the surface removes surface states and gives rise to a sharp peak at about - 3.8 eV below the valence band edge. © 1981.