Raman scattering in layer indium selenide under pressure
Solid State Communications, vol.87, no.8, pp.675-678, 1993 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 87 Issue: 8
- Publication Date: 1993
- Doi Number: 10.1016/0038-1098(93)90204-z
- Journal Name: Solid State Communications
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.675-678
- TED University Affiliated: No
Abstract
Experimental results of Raman scattering spectra of ε{lunate}-InSe crystals are presented at 300 K and pressures up to 10.2 kbar. Values of the mode-Grüneisen parameters were calculated using frequency-pressure dependences for five observed phonons. Changes of the shear force constants under pressure were analysed using linear-chain model both for ε{lunate}-InSe and ε{lunate}-GaSe crystals. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space. © 1993.