Direct-bandgap germanium active layers pumped above transparency based on tensilely strained nanomembranes

Boztuğ Yerci Ç. H., Chen F., Sanchez-Perez J., Sudradjat F., Paskiewicz D., Jacobson R., ...More

Quantum Electronics and Laser Science Conference, QELS 2011, Baltimore, MD, United States Of America, 1 - 06 May 2011, (Full Text)

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1364/cleo_si.2011.pdpa2
  • City: Baltimore, MD
  • Country: United States Of America
  • TED University Affiliated: No

Abstract

We show that mechanically stressed nanomembranes can be used to introduce sufficient tensile strain in Ge to transform it into a direct-bandgap, efficient light-emitting material that can support population inversion and thus provide optical gain. © 2011 Optical Society of America.