Raman scattering and hall effect in layer inse under pressure

Allakhverdiev K., Ellialtıoğlu S. Ş., Ismailov A., Ibragimov Z.

High Pressure Research, vol.13, no.1-3, pp.121-125, 1994 (Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 1-3
  • Publication Date: 1994
  • Doi Number: 10.1080/08957959408200272
  • Journal Name: High Pressure Research
  • Journal Indexes: Scopus
  • Page Numbers: pp.121-125
  • TED University Affiliated: No


Experimental results of Raman scattering, Hall effect and conductivity measurements of s-InSe crystals at 300K and pressures up to 10.2 kbar are presented. Changes of the shear force constants under pressure were analyzed using a linear-chain model. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space. Changes in the slopes of the Hall constant versus pressure and conductivity versus pressure dependence at about 3.5 kbar are explained by the existing representation of InSe as a direct band gap semiconductor. © 1994, Taylor & Francis Group, LLC. All rights reserved.