Low-temperature phase transitions in TlGaS2 layer crystals

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Aydinli A., Ellialtioǧlu R., Allakhverdiev K., Ellialtıoğlu S. Ş., HASANLI N.

Solid State Communications, vol.88, no.5, pp.387-390, 1993 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 88 Issue: 5
  • Publication Date: 1993
  • Doi Number: 10.1016/0038-1098(93)90230-k
  • Journal Name: Solid State Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.387-390
  • TED University Affiliated: No


Polarized Raman scattering spectra of TlGaS2 layer crystals have been studied for the first time as a function of temperature between 8.5 and 295 K. No evidence for a soft mode behaviour has been found. The anomalies observed in the temperature dependence of low- and high-frequency phonon modes at ∼ 250 and ∼ 180 K, respectively, are explained as due to the phase transitions. It is supposed that the phase transitions are caused by the deformation of structural complexes GaS4, rather than by slippage of Tl atom channels in [110] and [110] directions, which is mainly responsible for the appearance of the low-temperature ferroelectric phase transitions in other representatives of TlBX2 layer compounds. © 1993.