Atomic and electronic structure of Bi/GaAs(001)-α2(2 × 4)

Usanmaz, D.; ÇAKMAK, MEHMET; Ellialtıoğlu, Süleyman

doi:10.1088/0953-8984/20/26/265003

Atomic and electronic structure of Bi/GaAs(001)-α2(2 × 4)

Atıf İçin Kopyala

Usanmaz D., ÇAKMAK M., Ellialtıoğlu S. Ş.

Journal of Physics Condensed Matter, cilt.20, sa.26, 2008 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 20 Sayı: 26
Basım Tarihi: 2008
Doi Numarası: 10.1088/0953-8984/20/26/265003
Dergi Adı: Journal of Physics Condensed Matter
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
TED Üniversitesi Adresli: Hayır

Özet

We report an ab initio pseudopotential calculation for the atomic and electronic structure of Bi/GaAs(001)-α2(2 × 4). Three structural models with Bi coverages of Θ = 1/4 are considered, containing one Bi dimer or two Bi-As mixed dimers. According to our calculations for this coverage, the atomic model of the Bi/GaAs(001)-(2 × 4) reconstruction is similar to the α2 structure of the clean GaAs(001)-(2 × 4) surface in which the top As dimer is replaced by a Bi dimer. This result is in agreement with the most recent scanning tunneling microscopy work. © 2008 IOP Publishing Ltd.