Annealing of Nanocrystalline Silicon Micro-Bridges With Electrical Stress

Bakan G., Cywar A., Boztuğ Yerci Ç. H., Akbulut M. B., Silva H., Gokirmak A.

Symposium on Nanowires - Synthesis, Properties, Assembly and Applications held at the 2008 MRS Fall Meeting, Massachusetts, Amerika Birleşik Devletleri, 1 - 05 Aralık 2008, cilt.1144, ss.25-26 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1144
  • Basıldığı Şehir: Massachusetts
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.25-26
  • TED Üniversitesi Adresli: Hayır

Özet

Nanocrystalline silicon (nc-Si) micro-bridges are melted and crystallized through Joule heating by applying high-amplitude short duration voltage pulses. Full crystallization of nc-Si bridges is achieved by adjusting the voltage-pulse amplitude and duration. If the applied pulse cannot deliver enough energy to the bridges, only surface texture modification is observed. On the contrary, if the pulse is not terminated after the entire bridge melts. molten silicon diffuses on to the contact pads and the bridge tapers in the middle. Melting of the bridges can be monitored through current-time (I-t) and voltage-time (V-t) measurements during the electrical stress. Conductance of the bridges is enhanced after the electrical stress.